Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part II: Mechanism and Modeling

Understanding the switching mechanism of volatile resistive random access memory (RRAM) device is important to harness its characteristics and further enhance performance. Accurate modeling dynamic behavior also deep value for applications both as selector short-term synapse future neuromorphic operating in temporal domain. In this work, we investigate retention (relaxation) processes Ag-based metallic filamentary devices. We find that process can be modeled by ionic drift under electric field, while diffusion along filament surface driven gradient atomic concentration. Through theoretical analysis, unified within general Einstein relation. To confirm relation, collect mobility diffusivity data from literature using model. Finally, show read voltage dependent time explained competition between flux.